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IRFN340SMD Datasheet Preview

IRFN340SMD Datasheet

N-CHANNEL POWER MOSFET

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IRFN340SMD
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) m in . 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
13
3 .6 0 (0 .1 4 2 )
M ax.
BVDSS
ID(cont)
RDS(on)
400V
10A
0.55W
FEATURES
• HERMETICALLY SEALED SURFACE
2 MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
SMD1 PACKAGE
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES
Pad 1 – Source Pad 2 – Drain
Pad 3 – Gate
Note: IRFxxxSM also available with
pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current (VGS = 0 , Tcase = 25°C)
10A
ID Continuous Drain Current (VGS = 0 , Tcase = 100°C)
IDM Pulsed Drain Current 1
6A
40A
PD Power Dissipation @ Tcase = 25°C
125W
Linear Derating Factor
1.0W/°C
EAS
IAR
EAR
dv/dt
Single Pulse Avalanche Energy 2
Avalanche Energy 1
Repetitive Avalanche Energy 1
Peak Diode Recovery 3
650mJ
10A
12.5mJ
4.0V/ns
TJ , Tstg
TL
RqJC
RqJ–PCB
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
–55 to 150°C
300°C
1.0°C/W
TBD
Notes
1) Repetitive Rating – Pulse width limited by maximum junction temperature.
2) @ VDD = 50V,Starting TJ = 25°C, EAS =[0.5 * L* (IL2) * [BVDSS/(BVDSS-VDD)], Peak IL = 10A VGS = 10V,
2) 25 £ RG £ 200W
3) ISD £ 10A , di/dt £ 120A/ms , VDD £ BVDSS , TJ £ 150°C
4) Pulse Test: Pulse Width £ 300ms, d £ 2%
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00




Seme LAB

IRFN340SMD Datasheet Preview

IRFN340SMD Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

www.DataSheet4U.com
IRFN340SMD
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
Static Drain – Source On–State
RDS(on) Resistance4
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance4
IDSS Zero Gate Voltage Drain Current
IGSS
IGSS
Ciss
Coss
Crss
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
VGS = 10V
VDS = VGS
VDS ³ 15V
VGS = 0
VGS = 20V
VGS = –20V
ID = 6A
ID = 10A
ID = 250mA
IDS = 6A
VDS = 0.8BVDSS
TJ = 125°C
VGS = 0
VDS = 25V
f = 1MHz
Min.
400
2
4.9
Typ.
0.46
1400
3500
2300
Max. Unit
V
V/°C
0.55
0.70
4
25
250
100
–100
W
V
S((WW)
mA
nA
pF
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
LD
LS
Total Gate Charge 1
Gate – Source Charge 1
Gate – Drain (“Miller”) Charge 1
VGS = 10V
ID = 10A
VDS = 0.5BVDSS
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VDD = 200V
RG = 9.1W
ID = 10A
VGS = 10V
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current 1
Diode Forward Voltage4
Reverse Recovery Time4
Reverse Recovery Charge4
Forward Turn–On Time
IS = 10A
TJ = 25°C
VGS = 0
IF = 10A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
PACKAGE CHARACTERISTICS
Internal Drain Inductance (from centre of drain pad to die)
Internal Source Inductance (from centre of source pad to end of source bond wire)
32 65
2.2 10.0
13.8 40.5
2.5
92
79
58
10
40
1.5
Negligible
600
5.6
2.0
6.5
nC
ns
A
V
ns
mC
nH
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00


Part Number IRFN340SMD
Description N-CHANNEL POWER MOSFET
Maker Seme LAB
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