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Seme LAB

MJ11031 Datasheet Preview

MJ11031 Datasheet

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

No Preview Available !

SEME
LAB
NPN
MJ11028
MJ11030
MJ11032
PNP
MJ11029
MJ11031
MJ11033
MECHANICAL DATA
Dimensions in mm (inches)
25.4
(1.0)
10.92
(0.430)
COMPLEMENTARY
DARLINGTON
POWER TRANSISTOR
1.57
(0.062)
12
4.1
+0.4
0
(0.161
+0.016
0
)
4.0 ± 0.1
(0.157 ± 0.004)
11.65 ± 0.35
9.0
(0.459 ± 0.014) (0.354)
FEATURES
• HIGH DC CURRENT GAIN
HFE = 1000 Min @ IC = 25A
HFE = 400 Min 0@ IC = 50A
• CURVES TO 100A (Pulsed)
• DIODE PROTECTION TO RATED IC
• MONOLITHIC CONSTRUCTION WITH
BUILT-IN BASE – EMITTER SHUNT RESISTOR
• JUNCTION TEMPERATURE TO +200°C
Tolerance ±
0.127
(0.005)
unless otherwise stated
Pin 1 Base
TO–3
Pin 2 Emitter
Case Collector
APPLICATIONS
For use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
VCEO
Collector – Emitter Voltage
VCBO
Collector – Base Voltage
VEBO
Emitter – Base Voltage
IC Continuous Collector Current
ICM Peak Collector Current
IB Base Current
Ptot Total Dissipation at Tcase = 25°C
Derate above 25°C
TSTG , TJ Operating and Storage Junction Temperature Range
MJ11028 MJ11030 MJ11032
MJ11029 MJ11031 MJ11033
60V 90V 120V
60V 90V 120V
5V
50A
100A
2A
300W
1.71W/°C
–55 to +175°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 2/96




Seme LAB

MJ11031 Datasheet Preview

MJ11031 Datasheet

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

No Preview Available !

SEME
LAB
NPN
MJ11028
MJ11030
MJ11032
PNP
MJ11029
MJ11031
MJ11033
Parameter
Test Conditions
OFF CHARACTERISTICS
Collector Emitter
V(BR)CEO* Breakdown Voltage
IC = 100mA
IB = 0
MJ11028 , MJ11029
MJ11030 , MJ11031
MJ11032 , MJ11033
VCE = 60V
WRBE = 1k
MJ11028 , MJ11029
TC = 150°C
ICER
Collector Emitter
Leakage Current
VCE = 90V
WRBE = 1k
MJ11030 , MJ11031
TC = 150°C
WVCE = 120V
MJ11032 , MJ11033
RBE = 1k
TC = 150°C
IEBO
Emitter CutOff Current VBE = 5V
IC = 0
ICEO
Collector Emitter
Leakage Current
VCE = 50V
IB = 0
ON CHARACTERISTICS
hFE* DC Current Gain
VCE = 5V
VCE = 5V
IC = 25A
IC = 50A
VCE(sat)*
Collector Emitter
Saturation Voltage
IC = 25A
IC = 50A
IB = 250mA
IB = 500mA
VBE(sat)*
Base Emitter
Saturation Voltage
* Pulse Test: tp £ 300µs, d £ 2%.
IC = 25A
IC = 50A
IB = 200mA
IB = 300mA
Figure 1 – DC Safe Operating Area
Min.
60
90
120
1000
400
Typ. Max.
2
10
2
10
2
10
5
2
18000
2.5
3.5
3.0
4.5
Unit
V
mA
mA
mA
V
V
Figure 2 – DC Current Gain
Figure 3 – “ON” Voltage
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 2/96


Part Number MJ11031
Description COMPLEMENTARY DARLINGTON POWER TRANSISTOR
Maker Seme LAB
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MJ11031 Datasheet PDF






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