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Seme LAB

ZVN2106B Datasheet Preview

ZVN2106B Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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ZVN2106B
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
N–CHANNEL
ENHANCEMENT MODE
MOSFET
VDSS
ID
RDS(on)
60V
1.2A
2.0
5.08 (0.200)
typ.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
13
2.54
(0.100)
45°
TO-39 PACKAGE (TO-205AD)
(Underside View)
PIN 1 – SOURCE
PIN 3 – DRAIN
PIN 2 – GATE
CASE – DRAIN
FEATURES
Faster switching
Low Ciss
Integral Source-Drain Diode
High Input Impedance and High Gain
DESCRIPTION
This enhancement-mode (normally-off) vertical DMOS FET is
ideally suited to a wide range of switching and amplifying
applications where high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
High Reliability Screening options are available.
ABSOLUTE MAXIMUM RATINGS TCASE = 25°C unless otherwise stated
VDS Drain - Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TA = 25°C)
IDM
Drain Current
- Pulsed (Note 1)
VGS Gate - Source Voltage
Ptot(1)
Total Power Dissipation at Tmb 25°C
De-rate Linearly above 25°C
60V
1.2A
0.45A
8A
±20V
5W
0.040W/°C
Ptot(2)
Tj,Tstg
Total Power Dissipation at Tamb 25°C
Operating and Storage Junction Temperature Range
700mW
-55 to +150°C
THERMAL DATA
Rthj-c
Rthj-amb
NOTES:
Thermal Resistance Junction – Case
Max 20
Thermal Resistance Junction - Ambient
Max 179
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width 380µS, Duty Cycle , δ 2%
°C/W
°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 7927, ISSUE 1
Free Datasheet http://www.datasheet4u.com/




Seme LAB

ZVN2106B Datasheet Preview

ZVN2106B Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

ZVN2106B
STATIC ELECTRICAL RATINGS (Tcase=25°C unless otherwise stated)
Parameter
Test Conditions
V(BR)DSS
Drain – Source Breakdown Voltage
VGS = 0V
ID = 10µA
VGS(th)
Gate – Source threshold Voltage
VDS = VGS
ID = 1.0mA
IGSS Gate – Source Leakage Current
VGS = ±20V VDS = 0V
IDSS Zero Gate Voltage Drain Current
VDS = 60V
VDS = 48V
VGS = 0V
TC = 125°C
ID(on) On – State Drain Current (note 2)
VDS = 18V
VGS = 10V
RDS(on)
Drain – Source On Resistance (note 2) VGS = 10V
ID = 1.0A
gFS
Forward Transconductance (note 2)
VDS = 18V
ID = 1.0A
VSD Diode Forward Voltage (note 2)
VGS = 0V
Is = 0.45A
Min.
60
0.8
-
-
-
2
-
300
-
Typ.
-
-
-
-
-
-
-
-
0.8
Max.
-
2.4
±20
0.5
100
-
2
-
-
Unit
V
nA
µA
A
ms
V
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
trr Reverse Recovery Time
VDS = 18V
f = 1.0MHz
VGS = 0V
VDD = 18V
ID = 1A
(note 2)
VGS = 0V, IF = 0.45A, IR = 0.1A
- - 75
- - 45 pF
- - 20
--7
--8
ns
- - 12
- - 15
- 50 -
ns
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 7927, ISSUE 1
Free Datasheet http://www.datasheet4u.com/


Part Number ZVN2106B
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Seme LAB
Total Page 2 Pages
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