ZVN2106B Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: Seme LAB

Overview: ZVN2106B MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.2A RDS(on) 2.

Datasheet Details

Part number	ZVN2106B
Manufacturer	Seme LAB
File Size	119.10 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	ZVN2106B_SemeLAB.pdf

General Description

45° TO-39 PACKAGE (TO-205AD) (Underside View) PIN 1 – SOURCE PIN 3 – DRAIN CASE – DRAIN PIN 2 – GATE This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High Reliability Screening options are available.

CASE ABSOLUTE MAXIMUM RATINGS T VDS ID IDM VGS Ptot(1) Ptot(2) Tj,Tstg Drain - Source Voltage Drain Current Drain Current = 25°C unless otherwise stated 60V 1.2A 0.45A 8A ±20V 5W 0.040W/°C 700mW -55 to +150°C - Continuous (TC = 25°C) - Continuous (TA = 25°C) - Pulsed (Note 1) Gate - Source Voltage Total Power Dissipation at Tmb ≤ 25°C De-rate Linearly above 25°C Total Power Dissipation at Tamb ≤ 25°C Operating and Storage Junction Temperature Range THERMAL DATA Rthj-c Rthj-amb NOTES: Thermal Resistance Junction – Case Thermal Resistance Junction - Ambient Max Max 20 179 °C/W °C/W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

Key Features

2.54 (0.100) 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3.
Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain.

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