MJ4035 - SILICON DARLINGTON NPN TRANSISTOR

Semelab

Datasheet Details

Part number	MJ4035
Manufacturer	Semelab
File Size	178.05 KB
Description	SILICON DARLINGTON NPN TRANSISTOR
Datasheet	MJ4035 Datasheet
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SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With Integrated Anti-Parallel Collector-Emitter Diode • Hermetic TO3 Metal Package. • Ideally Suited For General Purpose Switching And Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage 100V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 16A IB Base Current 0.5A PD Total Power Dissipation at TC = 25°C 150W Derate Above 25°C 0.86W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 1.

Published: Oct 25, 2016 |