D5N40
D5N40 is HFD5N40 manufactured by SemiHow.
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 n C (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.27 Ω (Typ.) @VGS=10V 100% Avalanche Tested
D-PAK I-PAK
1 3
HFD5N40
2 3
HFU5N40
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
400 3.4 2.15 13.6 ±30 510 3.4 4.5 4.5
TJ, TSTG TL
Power Dissipation (TA = 25℃) Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
2.5 45 0.36 -55 to...
