HFC2N60U Datasheet 600V N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFC2N60U HFC2N60U 600V N-Channel MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 4 ȍ7S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 600 V RDS(on) typ = ȍ ID = 2 A TO-126 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS.