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HFG1N80 Datasheet N-Channel MOSFET

Manufacturer: SemiHow

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Datasheet Details

Part number HFG1N80
Manufacturer SemiHow
File Size 212.71 KB
Description N-Channel MOSFET
Download HFG1N80 Download (PDF)

Overview

HFG1N80_Preliminary HFG1N80 800V N-Channel MOSFET.

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 7.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 13 Ω (Typ. ) @VGS=10V Preliminary Aug 2008 BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A TO-92L 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv.

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