HFP13N50U Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFP13N50U HFP13N50U 500V N-Channel MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 34 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.39 ȍ7S#9GS=10V 100% Avalanche Tested Nov 2013 BVDSS = 500 V RDS(on) typ = 0.39 ȍ ID = 13 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EA.

Brand Logo	Part Number	Description	Manufacturer
	HFP13N50	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC