HFP2N90 - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

HFP2N90 n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFP2N90
Manufacturer	SemiHow
File Size	216.09 KB
Description	N-Channel MOSFET
Datasheet	HFP2N90 Datasheet

Full PDF Text Transcription for HFP2N90 (Reference)

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HFP2N90 Feb 2014 HFP2N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 2.2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Rob...

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Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3.

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