HFP2N90
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 n C (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
- Continuous (TC = 25ఁ͚͑
- Continuous (TC = 100ఁ͚͑
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
900 2.2 1.4 8.8 ρ30 170 2.2 10.7 4.5
TJ, TSTG TL
Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,...
