HFP4N60F Datasheet 600V N-Channel MOSFET

Manufacturer: SemiHow

Overview: HFP4N60F July 2015 HFP4N60F 600V N-Channel MOSFET.

Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 2.6 ȍ7S#9GS=10V 100% Avalanche Tested BVDSS = 600 V RDS(on) typ ȍ ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR.