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HFP50N06 - 60V N-Channel MOSFET

Features

  • ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ (Typ. ) ) RDS(on) = 22 mΩ ID = 50 A TO-220 1 2 3 1.Gate 2. Drain 3. Source ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.018 Ω (Typ. ) @VGS=10V ‰ 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-Source Dr.

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Datasheet preview – HFP50N06

Datasheet Details

Part number HFP50N06
Manufacturer SemiHow
File Size 348.06 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet HFP50N06 Datasheet
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www.DataSheet4U.com HFP50N06 July 2005 BVDSS = 60 V HFP50N06 60V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ (Typ.) ) RDS(on) = 22 mΩ ID = 50 A TO-220 1 2 3 1.Gate 2. Drain 3. Source ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.018 Ω (Typ.
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