HFP50N06GC Datasheet N-channel MOSFET

Manufacturer: SemiHow

Overview: HFP50N06GC Dec 2014 HFP50N06GC 60V N-Channel MOSFET BVDSS = 60 V RDS(on) typ Pȍ ID = 50.

Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current D.

Brand Logo	Part Number	Description	Manufacturer
	HFP50N06	N-Channel MOSFET	Shantou Huashan
	HFP50N06V	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC