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HFS13N65U Datasheet Preview

HFS13N65U Datasheet

N-Channel MOSFET

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HFS13N65U
650V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 60.0 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.4 ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
March 2013
BVDSS = 650 V
RDS(on) typ = 0.4 ȍ
ID = 14.0 A
TO-220F
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
14.0 *
8.8 *
56.0 *
ρ30
810
14.0
5.4
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
54
0.43
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
2.3
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͣ͝;ΒΣΔΙ͑ͣͤ͑͢͡




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HFS13N65U Datasheet Preview

HFS13N65U Datasheet

N-Channel MOSFET

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Package Marking and Odering Information
Device Marking
HFS13N65U
HFS13N65U
Week Marking
YWWX
YWWXg
Package
TO-220F(A)
TO-220F(A)
Packing
Tube
Tube
TO-220F(A) : Dual Gauge
Quantity
50
50
RoHS Status
Pb Free
Halogen Free
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 7.0 A
2.5
--
Off Characteristics
BVDSS
ǻBVDSS
/ǻTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
Dynamic Characteristics
VGS = 0 V, ID = 250
ID = 250 , Referenced to 25
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125
VGS = ρ30 V, VDS = 0 V
650
--
--
--
--
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 325 V, ID = 14.0 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 520 V, ID = 14.0 A,
VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 14.0 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 14.0 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
Typ Max Units
-- 4.5
0.4 0.5
V
Ÿ
-- -- V
0.6 -- V/
-- 1
-- 10
-- ρ100
3200
250
16.0
4160
330
21.0
95
90
360
90
60.0
16.0
17.0
190
180
720
180
78.0
--
--
nC
nC
nC
-- 14.0
-- 56
-- 1.4
377 --
8.2 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=7.6mH, IAS=14.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$, di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͣ͝;ΒΣΔΙ͑ͣͤ͑͢͡


Part Number HFS13N65U
Description N-Channel MOSFET
Maker SemiHow
Total Page 7 Pages
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