HFS4N60FS Datasheet 600V N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFS4N60FS July 2015 HFS4N60FS 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 4.

TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 2.6 ȍ7S#9GS=10V 100% Avalanche Tested Single Gauge Package 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source V.