HFS4N65F Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFS4N65F July 2015 HFS4N65F 650V N-Channel MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 3.0 ȍ7S#9GS=10V 100% Avalanche Tested BVDSS = 650 V RDS(on) typ ȍ ID = 4 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR.