HFS50N06A Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFS50N06A Oct 2015 HFS50N06A 60V N-Channel MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 27 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ. ) @VGS=10V 100% Avalanche Tested BVDSS = 60 V RDS(on) typ = 18 Pȍ ID = 50 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EA.