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HFT1N60S Datasheet Preview

HFT1N60S Datasheet

N-Channel MOSFET

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Dec 2009
HFT1N60S
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ ȍ
ID = 0.2 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 3.0 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
SOT-223
2
3
1
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
0.2
0.12
0.8
ρ30
33
0.2
0.2
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.1
0.02
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RșJA
Parameter
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
Max.
60
Units
/W
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡




SemiHow

HFT1N60S Datasheet Preview

HFT1N60S Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 0.1 A
2.0
--
Off Characteristics
BVDSS
ǻBVDSS
/ǻTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 , Referenced to25
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 1.0 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 480 V, ID = 1.0 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 0.2 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 1.0 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.0
10 12
V
Ÿ
-- -- V
0.6 -- V/
-- 25
-- 250
-- 100
-- -100
130 170
22 29
5.0 6.5
7 24
21 52
13 36
27 64
3.0 4.0 nC
0.5 -- nC
1.3 -- nC
-- 0.2
-- 0.8
-- 1.4
190 --
0.53 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=59mH, IAS=1.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡


Part Number HFT1N60S
Description N-Channel MOSFET
Maker SemiHow
Total Page 7 Pages
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