HFU5N60F Datasheet 600V N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFD5N60F_HFU5N60F HFD5N60F / HFU5N60F 600V N-Channel MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 12.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested Dec 2015 BVDSS = 600 V RDS(on) typ ȍ ID = 5 A D-PAK I-PAK 2 1 3 HFD5N60F 1 2 3 HFU5N60F 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol P.