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HGA40N120FV Datasheet Preview

HGA40N120FV Datasheet

N-Channel MOSFET

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HGA40N120FV
1200V Field Stop Trench IGBT
FEATURES
1200V Field Stop Trench Technology
Low Saturation Voltage
High Switching Frequency
Very Soft, Fast Recovery Anti-parallel diode
APPLICATION
Welding Converters
Uninterruptible Power Supply
General Purpose Inverters
March 2015
VCES = 1200 V
IC = 40 A
VCE(sat) typ = 2.0 V
TO-247
GC E
Absolute Maximum Ratings
Symbol
VCES
IC
ICM
IF
IFM
VGES
PD
TJ, TSTG
TL
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current
– Continuous (TC = 25)
– Continuous (TC = 100)
Collector Current
– Pulsed
(Note 1)
Diode Forward Current – Continuous (TC = 100)
Diode Maximum Forward Current
Gate-Emitter Voltage
Power Dissipation
Power Dissipation
– Continuous (TC = 25)
– Continuous (TC = 100)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Notes:
1. Pulse width limited by max junction temperature
Thermal Resistance Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Value
1200
64
40
160
20
60
±20
400
160
-55 to +150
300
Typ.
--
--
--
Max.
0.31
1.11
40
Units
V
A
A
A
A
A
V
W
W
Units
/W
SEMIHOW REV.A0,May 2014




SemiHow

HGA40N120FV Datasheet Preview

HGA40N120FV Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics of the IGBT TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ
Max Units
On Characteristics
VGE(th) Gate-Emitter Threshold Voltage VCE = VGE, IC = 1.5 mA
4.0 -- 7.0
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15 V,
IC = 40 A
TC = 25
TC = 125
--
--
2.0 2.6
2.5 --
V
V
Off Characteristics
BVCES
Collector-Emitter Breakdown
Voltage
ICES
Zero Gate Voltage Collector
Current
IGES Gate-Emitter Leakage Current
VGE = 0 V, IC = 250 uA
VCE = 1200 V, VGE = 0 V
VGE = ±20 V, VCE = 0 V
1200 -- -- V
-- -- 1 mA
-- -- ±250
Dynamic Characteristics
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1.0 MHz
-- 9150 --
-- 295 --
-- 76 --
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
Qg Total Gate Charge
Qge Gate-Emitter Charge
Qgc Gate-Collector Charge
VCC = 600 V, IC = 40 A,
RG = 10 Ω, VGE = 15V
Inductive load, TC = 25
VCC = 600 V, IC = 40 A,
RG = 10 Ω, VGE = 15V
Inductive load, TC = 125
VCC = 600V, IC = 40 A,
VGE = 15 V
-- 50 --
-- 65 --
-- 295 --
-- 85 --
-- 2.3 --
-- 2.2 --
-- 4.5
-- 90 --
-- 70 --
-- 415 --
-- 165 --
-- 2.65 --
-- 3.2 --
-- 5.85 --
-- 225 --
-- 55 --
-- 90 --
mJ
mJ
mJ
mJ
mJ
mJ
nC
nC
nC
SEMIHOW REV.A0,May 2014


Part Number HGA40N120FV
Description N-Channel MOSFET
Maker SemiHow
Total Page 8 Pages
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