900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SemiHow

HRA56N08K Datasheet Preview

HRA56N08K Datasheet

N-Channel MOSFET

No Preview Available !

HRA56N08K
80V N-Channel Trench MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Excellent Switching Characteristics
Unrivalled Gate Charge : 110nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 4.5 (Typ.) @VGS=10V
100% Avalanche Tested
December 2014
BVDSS = 80 V
RDS(on) typ = 4.5mΩ
ID = 110 A
TO-247
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25)
- Derate above 25
80
110
77
370
±25
745
13.6
136
0.9
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +175
300
Units
V
A
A
A
V
mJ
mJ
W
W/
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
1.1
40
Units
/W
SEMIHOW REV.A0,December 2014




SemiHow

HRA56N08K Datasheet Preview

HRA56N08K Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 40 A
2.2
--
gFS Forward Transconductance
Off Characteristics
VDS = 20, ID = 40 A
--
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 64 V, VGS = 0 V
VDS = 64 V, TJ = 125
VGS = ±25 V, VDS = 0 V
80
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
--
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 40 V, ID = 30 A,
RG = 6
VDS = 64 V, ID = 30 A,
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 30 A, VGS = 0 V
diF/dt = 100 A/μs
--
--
--
--
--
-- 3.8 V
4.5 5.6 m
80 --
S
-- -- V
-- 1
-- 100
-- ±100
4700
620
400
1.7
--
--
--
--
65 --
70 --
190 --
50 --
110 --
24 --
44 --
nC
nC
nC
-- 110
-- 370
-- 1.3
60 --
100 --
A
V
nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=29A, VDD=35V, RG=25, Starting TJ =25°C
SEMIHOW REV.A0,December 2014


Part Number HRA56N08K
Description N-Channel MOSFET
Maker SemiHow
Total Page 7 Pages
PDF Download

HRA56N08K Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 HRA56N08K N-Channel MOSFET
SemiHow





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy