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HRF120N10K Datasheet Preview

HRF120N10K Datasheet

N-Channel MOSFET

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HRF120N10K
100V N-Channel Trench MOSFET
FEATURES
BVDSS = 100 V
ID = 73 A
Unrivalled Gate Charge : 65 nC (Typ.)
Lower RDS(ON) : 10 (Typ.) @VGS=10V
100% Avalanche Tested
December 2014
8DFN 5x6
1
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25)
Power Dissipation (TA = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
100
73 *
51 *
200 *
±25
265
8.8
88
2.4
-55 to +175
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
mJ
W
W
Thermal Resistance Characteristics
Symbol
Parameter
RθJA
RθJC
Junction-to-Ambient
Junction-to-Case
Typ.
--
--
Max.
62
1.7
Units
/W
SEMIHOW REV.A0,December 2014




SemiHow

HRF120N10K Datasheet Preview

HRF120N10K Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 40 A
2.0
--
gFS Forward Transconductance
Off Characteristics
VDS = 20, ID = 40 A
--
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 80 V, VGS = 0 V
VDS = 80 V, TJ = 125
VGS = ±25 V, VDS = 0 V
100
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
--
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 50 V, ID = 30 A,
RG = 6
VDS = 80 V, ID = 30 A,
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 30 A, VGS = 0 V
diF/dt = 100 A/μs
--
--
--
--
--
-- 3.6
10 12
70 --
-- --
-- 1
-- 100
-- ±100
3150
340
180
1.2
--
--
--
--
40 --
50 --
120 --
40 --
65 --
12 --
24 --
-- 73
-- 200
-- 1.3
50 --
80 --
V
m
S
V
nC
nC
nC
A
V
nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=20A, VDD=25V, RG=25, Starting TJ =25°C
SEMIHOW REV.A0,December 2014


Part Number HRF120N10K
Description N-Channel MOSFET
Maker SemiHow
Total Page 7 Pages
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