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HRLF125N06K - N-Channel MOSFET

Key Features

  •  BVDSS = 60 V  ID = 70 A  Unrivalled Gate Charge : 50 nC (Typ. )  Lower RDS(ON) : 10 mΩ (Typ. ) @VGS=10V  Lower RDS(ON) : 12 mΩ (Typ. ) @VGS=4.5V  100% Avalanche Tested December 2014 8DFN 5x6 1 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current.
  • Continuous (TC = 25℃).
  • Continuous (TC = 100℃).
  • Pulsed (Note 1) Gate-Source Vol.

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Datasheet Details

Part number HRLF125N06K
Manufacturer SemiHow
File Size 812.03 KB
Description N-Channel MOSFET
Datasheet download datasheet HRLF125N06K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HRLF125N06K HRLF125N06K 60V N-Channel Trench MOSFET FEATURES  BVDSS = 60 V  ID = 70 A  Unrivalled Gate Charge : 50 nC (Typ.)  Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V  Lower RDS(ON) : 12 mΩ (Typ.) @VGS=4.