Datasheet Summary
HRLD125N06K_HRLU125N06K
HRLD125N06K / HRLU125N06K
60V N-Channel Trench MOSFET
Features
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V Lower RDS(ON) : 12 mΩ (Typ.) @VGS=4.5V 100% Avalanche Tested
December 2014
BVDSS = 60 V RDS(on) typ = 10 mΩ ID = 70 A
D-PAK I-PAK
1 3
HRD125N06K
2 3
HRU125N06K
1.Gate 2. Drain 3....