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HRLU150N10K Datasheet Preview

HRLU150N10K Datasheet

N-Channel MOSFET

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HRLD150N10K / HRLU150N10K
100V N-Channel Trench MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 80 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 13 (Typ.) @VGS=10V
‰ Lower RDS(ON) : 14 (Typ.) @VGS=4.5V
‰ 100% Avalanche Tested
Jan 2015
BVDSS = 100 V
RDS(on) typ = 13
ID = 70 A
D-PAK I-PAK
2
1
1
32
3
HRLD150N10K HRLU150N10K
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25)
- Derate above 25
100
70 *
49 *
245 *
ρ20
265
11
3
110
0.73
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +175
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
mJ
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.4
50
110
Units
/W
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SemiHow

HRLU150N10K Datasheet Preview

HRLU150N10K Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Off Characteristics
VDS = VGS, ID = 250
VGS = 10 V, ID = 30 A
VGS = 4.5 V, ID = 15 A
VDS = 15, ID = 30 A
1.0
--
--
--
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 80 V, VGS = 0 V
VDS = 80 V, TJ = 125
VGS = ρ20 V, VDS = 0 V
100
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
--
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 50 V, ID = 30 A,
RG = 6 Ÿ
VDS = 80 V, ID = 30 A,
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 30 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
--
--
--
--
-- 2.4
13 15
14 20
130 --
-- --
-- 1
-- 100
-- ρ100
4000
290
150
1.2
--
--
--
--
30 --
30 --
180 --
25 --
80 --
10 --
15 --
-- 70
-- 245
-- 1.3
50 --
80 --
V
mŸ
mŸ
S
V
Ÿ
nC
nC
nC
A
V
nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=20A, VDD=25V, RG=25:, Starting TJ =25qC
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͦ͑͢͡


Part Number HRLU150N10K
Description N-Channel MOSFET
Maker SemiHow
Total Page 9 Pages
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