HRLD150N10K / HRLU150N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Excellent Switching Characteristics
Unrivalled Gate Charge : 80 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 13 Pȍ (Typ.) @VGS=10V
Lower RDS(ON) : 14 Pȍ (Typ.) @VGS=4.5V
100% Avalanche Tested
Jan 2015
BVDSS = 100 V
RDS(on) typ = 13 Pȍ
ID = 70 A
D-PAK I-PAK
2
1
1
32
3
HRLD150N10K HRLU150N10K
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25)
- Derate above 25
100
70 *
49 *
245 *
ρ20
265
11
3
110
0.73
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +175
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
mJ
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.4
50
110
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͦ͑͢͡
