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HRLU1B8N10K Datasheet Preview

HRLU1B8N10K Datasheet

N-Channel MOSFET

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HRLD1B8N10K / HRLU1B8N10K
100V N-Channel Trench MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 11.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 140 (Typ.) @VGS=10V
‰ Lower RDS(ON) : 185 (Typ.) @VGS=4.5V
‰ Built-in ESD Diode
‰ 100% Avalanche Tested
Jan 2015
BVDSS = 100 V
RDS(on) typ = Pȍ
ID = 2.7 A
D-PAK I-PAK
2
1
1
32
3
HRLD1B8N10K HRLU1B8N10K
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 70)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25)
- Derate above 25
100
2.7
2.1
10.0
ρ16
22
2.7
2.5
33
0.26
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
3.8
50
110
Units
V
A
A
A
V
mJ
A
W
W
W/
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͦ͑͢͡




SemiHow

HRLU1B8N10K Datasheet Preview

HRLU1B8N10K Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 2.7 A
VGS = 4.5 V, ID = 2 A
1.2
--
--
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 80 V, VGS = 0 V
VDS = 80 V, TJ = 125
VGS = ρ16 V, VDS = 0 V
100
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 30 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 50 V, ID = 2.7 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 80 V, ID = 2.7 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 2.7 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 2 A, VGS = 0 V
diF/dt = 100 A/ȝV
(Note 4)
--
--
-- 2.8
140 180
185 240
-- --
-- 1
-- 100
-- ρ10
440 570
36 47
20 26
12 34
16 42
55 120
20 50
11.5 15
1.5 --
2.5 --
-- 2.7
-- 10
-- 1.1
43 --
73 --
V
mŸ
mŸ
V
nC
nC
nC
A
V
nC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, ISD”$9DD=25V, RG=25:, Starting TJ =25qC
3. ISD”$di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͦ͑͢͡


Part Number HRLU1B8N10K
Description N-Channel MOSFET
Maker SemiHow
Total Page 9 Pages
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