HRP180N10K Datasheet N-channel Trench MOSFET

Manufacturer: SemiHow

Overview: HRP180N10K HRP180N10K 100V N-Channel Trench MOSFET.

Datasheet Details

 Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 85 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 15 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ =15 mΩ ID = 65 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current D.