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HRP33N04K Datasheet Preview

HRP33N04K Datasheet

N-Channel MOSFET

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HRP33N04K
40V N-Channel Trench MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Excellent Switching Characteristics
Unrivalled Gate Charge : 155nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 2.7 (Typ.) @VGS=10V
100% Avalanche Tested
December 2014
BVDSS = 40 V
RDS(on) typ = 2.7mΩ
ID = 180 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25)
- Derate above 25
40
180
126
630
±20
4900
17.6
176
1.17
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +175
300
Units
V
A
A
A
V
mJ
mJ
W
W/
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.85
--
62.5
Units
/W
SEMIHOW REV.A0,December 2014




SemiHow

HRP33N04K Datasheet Preview

HRP33N04K Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 40 A
2.0
--
gFS Forward Transconductance
Off Characteristics
VDS = 20, ID = 40 A
--
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 32 V, VGS = 0 V
VDS = 32 V, TJ = 125
VGS = ±20 V, VDS = 0 V
40
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
--
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 20 V, ID = 30 A,
RG = 6
VDS = 32 V, ID = 30 A,
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 25 A, VGS = 0 V
diF/dt = 50 A/μs
--
--
--
--
--
-- 3.6 V
2.7 3.3 m
90 --
S
-- -- V
-- 1
-- 100
-- ±100
6200
1400
980
1.7
--
--
--
--
90 --
130 --
180 --
110 --
155 --
25 --
65 --
nC
nC
nC
-- 180
A
-- 630
-- 1.3 V
70 --
35 -- nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=35A, VDD=35V, RG=25, Starting TJ =25°C
SEMIHOW REV.A0,December 2014


Part Number HRP33N04K
Description N-Channel MOSFET
Maker SemiHow
Total Page 8 Pages
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