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KSD13005A Datasheet Preview

KSD13005A Datasheet

NPN Silicon Power Transistor

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KSB13005A/KSG13005A/KSU13005A
KSD13005A/KSH13005A/KSH13005AF
NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 4A
General Description
• High voltage, high speed power switching
• Suitable for switching regulator, inverters motor controls
Features
• VCBO = 700V
• VCEO = 400V
• VBEO = 9V
• IC = 4A
TO-92
TO-92L
TO-251
1 23
TO-252
1 23
TO-220
3
12
TO-220F
23
1
Ordering Information
Ordering number
KSB13005A
KSB13005AR
KSG13005AR
KSU13005A
KSD13005A
KSH13005A
KSH13005AF
Package
TO-92
TO-92
TO-92L
TO-251
TO-252
TO-220
TO-220F
23
1
23
1
Pin Assignment
123
BCE
ECB
ECB
BCE
BCE
BCE
BCE
Packing
Ammo
Ammo
Ammo
Tube
Reel
Tube
Tube
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡




SemiHow

KSD13005A Datasheet Preview

KSD13005A Datasheet

NPN Silicon Power Transistor

No Preview Available !

KSB13005A/KSG13005A/KSU13005A
KSD13005A/KSH13005A/KSH13005AF
NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 4A
Absolute Maximum Ratings TC=25unless otherwise noted
CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25)
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
TO-
92
2.8
TO-
92L
3.8
RATING
TO-
251(2)
700
400
9
4
8
2
40
150
-65~150
TO-
220
75
TO-
220F
30
UNIT
V
V
V
A
A
A
W
Electrical Characteristics TC=25unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Base Breakdown Voltage
VCBO
IC=500ȝA, IE=0
Collector-Emitter Breakdown Voltage
VCEO
IC=10mA, IB=0
Emitter Cut-off Current
IEBO
VEB=9V,IC=0
*DC Current Gain
hFE1
hFE2
VCE=5V,IC=1A
VCE=5V,IC=2A
*Collector-Emitter Saturation Voltage
VCE(sat)
IC=1A,IB=0.2A
IC=2A,IB=0.5A
IC=4A,IB=1A
*Base-Emitter Saturation Voltage
VBE(sat)
IC=1A,IB=0.2A
IC=2A,IB=0.5A
Output Capacitance
Cob VCB=10V, f=0.1MHz
Current Gain Bandwidth Product
fT VCE=10V,IC=0.5A
Turn on Time
Storage Time
Fall Time
* Pulse Test: Pulse Width”ȝV'XW\&\FOH”
ton Vcc=125V, Ic=2A
tstg IB1=0.4A, IB2= -0.4A
tF RL=62.5ȍ
Min Typ. Max Unit
700 V
400 V
1
20 40
8 40
0.5 V
0.8 V
1V
1.2 V
1.6 V
65
4
0.8
4.0
0.9
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡


Part Number KSD13005A
Description NPN Silicon Power Transistor
Maker SemiHow
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