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2N7000 Datasheet Preview

2N7000 Datasheet

Logic N-Channel MOSFET

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SemiWell Semiconductor
Features
RDS(on) (Max 5 )@VGS=10V
RDS(on) (Max 5.3)@VGS=4.5V
Gate Charge (Typical 0.5nC)
Maximum Junction Temperature Range (150°C)
2N7000
Logic N-Channel MOSFET
Symbol
2. Gate {
{ 3. Drain
◀▲
{ 1. Source
General Description
This Power MOSFET is produced using planar DMOS technology.
And this Power MOSFET is well suited for Battery switch, Load
switch, Motor controller and other small signal switches.
TO-92
12 3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TA = 25°C)
Drain Current Pulsed
Gate to Source Voltage
Total Power Dissipation Single Operation (TA=25°C)
Total Power Dissipation Single Operation (TA=70°C)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 10 seconds.
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient
Min.
-
(Note 1)
Value
60
200
500
±20
0.4
3.2
- 55 ~ 150
300
Value
Typ.
-
Max.
312.5
Units
V
mA
mA
V
W
mW
°C
°C
Units
°C/W
January, 2003. Rev. 0.
Copyr ight@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/6




SemiWell

2N7000 Datasheet Preview

2N7000 Datasheet

Logic N-Channel MOSFET

No Preview Available !

2N7000
Electrical Characteristics ( TJ = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state
Resistance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VDS = VGS, ID = 250uA
VGS = 10 V, ID = 500mA
VGS = 4.5 V, ID = 75mA
VGS =0 V, VDS =25V, f = 1MHz
VDD =30V, ID =200mA, RG =50
VGS = 10 V
(Note 2,3)
VDS =30V, VGS =4.5V, ID =200mA
(Note 2,3)
Min
60
-
-
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
--V
48 - mV/°C
-
1
1000
uA
100 nA
-
-100
nA
- 2.5
1.55 5
1.9 5.3
V
20 25
11 14 pF
34
4
2.5
17
7
0.5
0.15
0.2
18
15
44
24
0.65
-
-
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
IS
VSD
Parameter
Test Conditions
Maximum Continuous Diode Forward Current
Diode Forward Voltage
IS =200mA, VGS =0V
(Note 2)
Min.
-
-
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width 300us, Duty Cycle 2%
3. Essentially independent of operating temperature.
Typ.
-
-
Max.
200
1.2
Unit.
mA
V
2/6


Part Number 2N7000
Description Logic N-Channel MOSFET
Maker SemiWell
Total Page 6 Pages
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