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SemiWell Semiconductor

BT152-600 Datasheet Preview

BT152-600 Datasheet

Silicon Controlled Rectifiers

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SemiWell Semiconductor
Preliminary
BT152-600
Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 20 A )
Low On-State Voltage (1.4V(Typ.)@ ITM)
Non-iosolated Type
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
Symbol
2. Anode
TO-220
123
3. Gate
1. Cathode
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Half Sine Wave : TC = 103 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
di/dt Critical rate of rise of on-state current
PGM
PG(AV)
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Over any 20ms period
Ratings
600
12.7
20
220
242
50
20
0.5
5
5
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
A/
W
W
A
V
°C
°C
Nov, 2003. Rev. 0
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
1/5




SemiWell Semiconductor

BT152-600 Datasheet Preview

BT152-600 Datasheet

Silicon Controlled Rectifiers

No Preview Available !

www.DataSheet4U.com
BT152-600
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VTM Peak On-State Voltage (1)
IGT Gate Trigger Current (2)
VAK = VDRM
TC = 25 °C
TC = 125 °C
ITM = 40 A
tp=380
VAK = 6 V(DC), RL=10 Ω
TC = 25 °C
10
200
1.7 V
20 mA
VGT Gate Trigger Voltage (2)
VD = 6 V(DC), RL=10 Ω
TC = 25 °C
1.5 V
VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 ─ ─ V
dv/dt
Critical Rate of Rise Off-State Linear slope up to VD=VDRM 67%,
Voltage
Gate open
TJ = 125°C
200
V/
IH Holding Current
IT = 100mA, Gate Open
TC = 25 °C
20 mA
Rth(j-c)
Rth(j-a)
Thermal Impedance
Thermal Impedance
Junction to case
Junction to Ambient
Notes :
1. Pulse Width 1.0 ms , Duty cycle 1%
2. RGK Current not Included in measurement.
─ ─ 1.2 °C/W
─ ─ 60 °C/W
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Part Number BT152-600
Description Silicon Controlled Rectifiers
Maker SemiWell Semiconductor
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BT152-600 Datasheet PDF





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