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SemiWell Semiconductor

BTA12-600B Datasheet Preview

BTA12-600B Datasheet

Bi-Directional Triode Thyristor

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SemiWell Semiconductor
Bi-Directional Triode Thyristor
Features
Repetitive Peak Off-State Voltage : 600V
www.DataSheet4U.comR.M.S On-State Current ( IT(RMS)= 12 A )
High Commutation dv/dt
Isolation Voltage ( VISO = 1500V AC )
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable require-
ments by Underwriters Laboratories Inc.
Preliminary
BTA12-600B
UL : E228720
Symbol
2.T2
▼▲
3.Gate
1.T1
TO-220F
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t
TC = 79 °C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
PGM
PG(AV)
IGM
VGM
VISO
TJ
TSTG
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
Mass
A.C. 1 minute
Ratings
600
12
119/130
71
5.0
0.5
2.0
10
1500
- 40 ~ 125
- 40 ~ 150
2.0
Units
V
A
A
A2s
W
W
A
V
V
°C
°C
g
Mar, 2004. Rev. 0
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/6




SemiWell Semiconductor

BTA12-600B Datasheet Preview

BTA12-600B Datasheet

Bi-Directional Triode Thyristor

No Preview Available !

BTA12-600B
Electrical Characteristics
Symbol
Items
www.DataSheet4U.com
IDRM
VTM
I+GT1
I
-
GT1
I
-
GT3
V+GT1
V-GT1
V-GT3
VGD
(dv/dt)c
IH
Rth(j-c)
Repetitive Peak Off-State
Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Voltage
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Conditions
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
IT = 20 A, Inst. Measurement
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
TJ = 125 °C, VD = 1/2 VDRM
TJ = 125 °C, [di/dt]c = -6.0 A/ms,
VD=2/3 VDRM
Junction to case
Ratings
Min. Typ. Max.
Unit
─ ─ 2.0 mA
─ ─ 1.4 V
─ ─ 30
─ ─ 30 mA
─ ─ 30
─ ─ 1.5
─ ─ 1.5 V
─ ─ 1.5
0.2 ─ ─ V
10 ─ ─ V/
20 mA
─ ─ 3.3 °C/W
2/6


Part Number BTA12-600B
Description Bi-Directional Triode Thyristor
Maker SemiWell Semiconductor
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BTA12-600B Datasheet PDF






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