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SemiWell Semiconductor

SBN13001 Datasheet Preview

SBN13001 Datasheet

High Voltage Fast-Switching NPN Power Transistor

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SemiWell Semiconductor
SBN13001
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical 120ns@100mA)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 120mV@100mA/20mA)
- Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as lighting system, switching regulator,
inverter and deflection circuit.
Symbol
1.Base
2.Collector
3.Emitter
TO-92
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PC
TSTG
TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 )
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
Collector Peak Current ( tP 5 ms )
Base Current
Base Peak Current ( tP 5 ms )
Total Dissipation at TA = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient
12 3
Value
700
400
8.0
0.2
0.4
0.1
0.2
750
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
mW
°C
°C
Value
166
Units
°C/W
Oct, 2002. Rev. 1
Copyright@S emiWell S emiconduct or Co., Ltd., All rights reserved
1/4




SemiWell Semiconductor

SBN13001 Datasheet Preview

SBN13001 Datasheet

High Voltage Fast-Switching NPN Power Transistor

No Preview Available !

www.DataSheet4U.com
SBN13001
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Condition
ICEV
VCEO(sus)
VCE(sat)
VBE(sat)
hFE
ton
ts
tf
ts
tf
ts
tf
Collector Cut-off Current
( VBE = - 1.5V )
Collector-Emitter Sustaining Voltage
( IB = 0 )
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Resistive Load
Turn-On Time
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
VCE = 650V
VCE = 650V
IC = 1 mA
IC = 50mA
IC = 100mA
IC = 50mA
IC = 50mA
IC = 100mA
IC = 100mA
IB1 = 20mA
TP = 25
VCC = 15V
IB1 = 20mA
L = 0.35mH
VCC = 15V
IB1 = 20mA
L = 0.35mH
TC = 100 °C
IB = 10mA
IB = 20mA
IB = 10mA
VCE = 10V
VCE = 10V
VCC = 125V
IB2 = -20mA
IC = 100mA
IB2 = -50mA
Vclamp = 300V
IC = 100mA
IB2 = -50mA
Vclamp = 300V
TC = 100 °C
Min
-
400
-
-
10
10
-
-
-
Typ Max Units
-
1.0
5.0
mA
--V
-
0.3
0.4
V
-1V
- 30
0.2 1.0
1.5 3.0
0.15 0.4
2.0 4.0
0.12 0.3
2.4 5.0
0.15 0.4
Notes :
Pulse Test : Pulse width 300, Duty cycle 2%
2/4


Part Number SBN13001
Description High Voltage Fast-Switching NPN Power Transistor
Maker SemiWell Semiconductor
Total Page 4 Pages
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