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SemiWell Semiconductor

SBN13003A Datasheet Preview

SBN13003A Datasheet

High Voltage Fast-Switching NPN Power Transistor

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SemiWell Semiconductor
SBN13003A
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical 120ns@1.0A)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 230mV@1.0A/0.25A)
- Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as lighting system, switching regulator,
inverter and deflection circuit.
Symbol
3.Base
2.Collector
1.Emitter
TO-92
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PC
TSTG
TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 )
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
Collector Peak Current ( tP 5 ms )
Base Current
Base Peak Current ( tP 5 ms )
Total Dissipation at TC = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient
12 3
Value
700
400
9.0
1.5
3.0
0.75
1.5
1.1
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
W
°C
°C
Value
113.6
Units
°C/W
Mar, 2003. Rev. 3
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
1/6




SemiWell Semiconductor

SBN13003A Datasheet Preview

SBN13003A Datasheet

High Voltage Fast-Switching NPN Power Transistor

No Preview Available !

www.DataSheet4U.com
SBN13003A
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Condition
ICEV
VCEO(sus)
VCE(sat)
VBE(sat)
hFE
ton
ts
tf
ts
tf
ts
tf
Collector Cut-off Current
( VBE = - 1.5V )
Collector-Emitter Sustaining Voltage
( IB = 0 )
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Resistive Load
Turn-On Time
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
VCE = 700V
VCE = 700V
IC = 10 mA
IC = 0.5A
IC = 1.0A
IC = 1.5A
IC = 0.5A
IC = 1.0A
IC = 0.5A
IC = 1.0A
IC = 1.0A
IB1 = 0.2A
TP = 25
VCC = 15V
IB1 = 0.2A
L = 0.35mH
VCC = 15V
IB1 = 0.2A
L = 0.35mH
TC = 100 °C
IB = 0.1A
IB = 0.25A
IB = 0.5A
IB = 0.1A
IB = 0.25A
VCE = 2V
VCE = 2V
VCC = 125V
IB2 = - 0.2A
IC = 1.0A
IB2 = -0.5A
Vclamp = 300V
IC = 1.0A
IB2 = -0.5A
Vclamp = 300V
TC = 100 °C
Min
-
400
-
-
10
5
-
-
-
Typ Max Units
-
1.0
5.0
mA
--V
0.3
- 0.5 V
1.0
-
1.0
1.2
V
30
- 25
0.25 1.0
1.32 3.0
0.23 0.4
1.2 4.0
0.12 0.3
1.8 5.0
0.16 0.4
Notes :
Pulse Test : Pulse width 300, Duty cycle 2%
2/6


Part Number SBN13003A
Description High Voltage Fast-Switching NPN Power Transistor
Maker SemiWell Semiconductor
Total Page 6 Pages
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