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SemiWell Semiconductor

SIM100D06AV1 Datasheet Preview

SIM100D06AV1 Datasheet

IGBT MODULE

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Preliminary
SIM100D06AV1
“HALF-BRIDGE” IGBT MODULE
Feature
design technology
Low VCE (sat)
Low Turn-off losses
www.DataSheet4US.choomrt tail current for over 20KHz
Applications
Motor controls
VVVF inverters
Inverter-type welding MC over 18KHZ
SMPS, Electrolysis
UPS/EPS, Robotics
Absolute Maximum Ratings @ Tj=25 (Per Leg)
Package : V1
Symbol
Parameter
Condition
VCES
VGES
IC
ICP
IF
IFM
tp
Viso
Tj
Tstg
Weight
Md
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short circuit test, VGE = 15V, VCC = 360V
Isolation Voltage test
Junction Temperature
Storage Temperature
Weight of Module
Mounting torque with screw : M5
TC =
TC = 80
TC =
TC = 80
TC =
TC = 150
AC @ 1 minute
VCES = 600V
Ic= 100A
VCE(ON) typ. = 1.5V
@Ic= 100A
Ratings
600
20
100 (130)
200
100 (130)
200
6 (8)
2500
-40 ~ 150
-40 ~ 125
190
2.0
Unit
V
V
A
A
A
A
V
g
N.m
Static Characteristics @ Tj = 25 (unless otherwise specified)
Parameters
VCE(ON)
VGE(th)
ICES
IGES
VFM
RGINT
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
Integrated gate resistor
Min
_
Typ
1.50
5.8
1.6
2
Max Unit
Test conditions
1.95
6.5
5.0
400
2.0
IC = 100A, VGE = 15V
V
VCE = VGE, IC = 4
VGE = 0V, VCE = 600V
VCE = 0V, VGE = V
V IF = 100A, VGE = 0V




SemiWell Semiconductor

SIM100D06AV1 Datasheet Preview

SIM100D06AV1 Datasheet

IGBT MODULE

No Preview Available !

Preliminary
SIM100D06AV1
Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25 (unless otherwise specified)
Parameters
Ciss
Coss
Crss
td(on)
tr
www.DataSheet4U.com
td(off)
tf
VRRM
IRM
trr
Qrr
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse leakage current
Reverse Recovery Time
Reverse Recovery Charge
Min
600
Typ
6100
390
190
70
25
260
60
125
4.7
Max Unit
Test conditions
VCE = 25V , VGE = V
pF
f = 1 MHz
Inductive Switching (125
VCC = 300V
ns
IC = 100A , VGE = 15V
RG = 3.3
V
250 VR = 600V
IF = 100A, VR = 300V
µC di / dt = 2000A /
Thermal Characteristics
Symbol
RΘJC
RΘJC
RΘCS
Parameter
Junction-to-Case (IGBT Part, Per 1/2 Module)
Junction-to-Case (Diode Part, Per 1/2 Module)
Case-to-Heat Sink (Conductive grease applied)
Min
Typ
Max
Unit
- - 0.44
- - 0.77 /W
- 0.05 -
specifications


Part Number SIM100D06AV1
Description IGBT MODULE
Maker SemiWell Semiconductor
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SIM100D06AV1 Datasheet PDF






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SemiWell Semiconductor





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