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SemiWell Semiconductor

SIM75D06AV1 Datasheet Preview

SIM75D06AV1 Datasheet

HALF-BRIDGE IGBT

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Preliminary
SIM75D06AV1
“HALF-BRIDGE” IGBT MODULE
Feature
design technology
Low VCE (sat)
Low Turn-off losses
Short tail current for over 20KHz
Applications
Motor controls
VVVF inverters
Inverter-type welding MC over 18KHZ
SMPS, Electrolysis
UPS/EPS, Robotics
Absolute Maximum Ratings @ Tj=25 (Per Leg)
Package : V1
Symbol
Parameter
Condition
VCES
VGES
IC
ICP
IF
IFM
tp
Viso
Tj
Tstg
Weight
Md
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short circuit test, VGE = 15V, VCC = 360V
Isolation Voltage test
Junction Temperature
Storage Temperature
Weight of Module
Mounting torque with screw : M5
Terminal connection torque : M5
TC =
TC = 80
TC =
TC = 80
TC =
TC = 150
AC @ 1 minute
VCES = 600V
Ic= 75A
VCE(ON) typ. = 1.5V
@Ic= 75A
Ratings
600
20
75 (100)
140
75 (100)
140
6 (8)
2500
-40 ~ 150
-40 ~ 125
190
2.0
2.0
Unit
V
V
A
A
A
A
V
g
N.m
N.m
Static Characteristics @ Tj = 25 (unless otherwise specified)
Parameters
VCE(ON)
VGE(th)
ICES
IGES
VF
RGINT
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
Integrated gate resistor
Min
Typ
1.50
5.8
1.6
4
Max Unit
Test conditions
IC = 75A, VGE = 15V
V
VCE = VGE, IC = 4
5.0 VGE = 0V, VCE = 600V
400 VCE = 0V, VGE = V
2.0 V IF = 75A, VGE = 0V




SemiWell Semiconductor

SIM75D06AV1 Datasheet Preview

SIM75D06AV1 Datasheet

HALF-BRIDGE IGBT

No Preview Available !

Preliminary
SIM75D06AV1
Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25 (unless otherwise specified)
Parameters
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VRRM
IRM
trr
Qrr
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse leakage current
Reverse Recovery Time
Reverse Recovery Charge
Min
600
Typ
4700
300
145
25
18
210
60
125
7.6
Max Unit
Test conditions
VCE = 25V , VGE = V
pF
f = 1 MHz
Inductive Switching (125
VCC = 300V
ns
IC = 75A, VGE = 15V
RG = 1.2
V
250 VR = 600V
IF = 75A, VR = 300V
µC di / dt = 2000A /
specifications
Thermal Characteristics
Symbol
RΘJC
RΘJC
RΘCS
Parameter
Junction-to-Case (IGBT Part, Per 1/2 Module)
Junction-to-Case (Diode Part, Per 1/2 Module)
Case-to-Heat Sink (Conductive grease applied)
Min
Typ
Max
Unit
- - 0.60
- - 0.98 /W
- 0.05 -


Part Number SIM75D06AV1
Description HALF-BRIDGE IGBT
Maker SemiWell Semiconductor
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SemiWell Semiconductor





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