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SemiWell Semiconductor

SIM75D12SV1 Datasheet Preview

SIM75D12SV1 Datasheet

HALF-BRIDGE IGBT

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Preliminary
SIM75D12SV1
“HALF-BRIDGE” IGBT MODULE
Features
Smarted NPT Technology Design
10µs Short circuit capability
Low turn-off losses
Short tail current for over 18KHZ
Positive VCE(on)
temperature coefficient
Applications
AC & DC Motor controls
VVVF inverters
Optimized for high frequency inverter
Type Welding machines
High frequency SMPS
UPS, Robotics
Package : V1
VCES = 1200V
Ic = 75A
VCE(ON) typ. = 2.6V
@ Ic = 75A
Absolute Maximum Ratings @ Tc = 25 (per leg)
Symbol
Parameter
Condition
VCES
Collector-to-Emitter Voltage
VGES
Gate emitter voltage
IC Continuous Collector Current
ICM Pulsed collector current
IF Diode Continuous Forward Current
IFM Diode Maximum Forward Current
TSC Short Circuit Withstand Time
Viso Isolation Voltage test
Tj Junction Temperature
Tstg Storage Temperature
Weight Weight of Module
Mounting Power Terminal Screw : M5
Torque Terminal connection Screw : M5
VGE = 0V, IC = 500µA
TC = 80
TC = 80
TC = 80
AC 1 minute
Ratings
1200
± 20
75
150
75
150
10
2500
-40 ~ 150
-40 ~ 125
190
3.5
3.5
Unit
V
V
A
A
A
A
µs
V
g
Nm
Nm
Electrical Characteristics @ Tj = 25 (unless otherwise specified)
Symbol
Parameters
Min Typ Max Unit
Test conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
-
-
VGE = 0V, IC = 500µA
VCE(ON)
Collector-to-Emitter Saturation Voltage
-
2.6 2.8
V IC = 75A, VGE = 15V
VGE(th)
Gate Threshold Voltage
- 5.0 6.0
VCE = VGE, IC = 500µA
ICES Zero Gate Voltage Collector Current
- - 500 µA VGE = 0V, VCE = 1200V
IGES Gate-to-Emitter Leakage Current
-
-
± 100
nA VCE = 0V, VGE = ± 20V
VFM Diode Forward Voltage Drop
- 2.1 2.4 V IC = 75A




SemiWell Semiconductor

SIM75D12SV1 Datasheet Preview

SIM75D12SV1 Datasheet

HALF-BRIDGE IGBT

No Preview Available !

Preliminary
SIM75D12SV1
Switching Characteristic @ Tj = 25
Symbol
Parameters
Cies Input capacitance
Coss Output capacitance
Cres Reverse transfer capacitance
td(on)
Turn-on delay time
tr Rise time
td(off)
Turn-off delay time
tf Fall time
(unless otherwise specified)
Min Typ Max Unit
- 4100 -
- 395 -
pF
- 160 -
- 72 -
- 32 -
- 366 -
ns
- 46 -
Irr Diode Peak Reverse Recovery current - 55 -
A
trr Diode Reverse Recovery time
- 180 -
ns
Test conditions
VCC = 30V, VGE = 0V
Tj = 125 , VCC = 600V
IC = 75A, VGE = 15V
RG = 4.7
Tj = 125 , VCC = 600V
IF = 75A, VGE = 15V
RG = 4.7, di/dt=1200A/us
Thermal Characteristic Values
Symbol
Parameters
R Junction-to-Case (IGBT Part, Per 1/2 Module)
R Junction-to-Case (Diode Part, Per 1/2 Module)
R Case-to-Heat Sink (Conductive grease applied)
Min
Typ
Max
Unit
- - 0.26
- - 0.54
- 0.05 -


Part Number SIM75D12SV1
Description HALF-BRIDGE IGBT
Maker SemiWell Semiconductor
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SemiWell Semiconductor





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