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Semicoa Semiconductor

2N4261 Datasheet Preview

2N4261 Datasheet

PNP Transistor

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Type 2N4261
Geometry 0014
Polarity PNP
Qual Level: JAN - JANS
Features:
Fast switching small signal silicon
transistor.
Housed in a TO-72 case.
Also available in chip form using
the 0014 chip geometry.
The Min and Max limits shown are
per MIL-PRF-19500/511 which
Semicoa meets in all cases.
Radiation graphs available.
Data Sheet No. 2N4261
Generic Part Number:
2N4261
REF: MIL-PRF-19500/511
TO-72
Maximum Ratings
TC = 25oC unless otherwise specified
Rating
Collector-Emitter Voltage
Symbol
VCEO
Rating
15
Collector-Base Voltage
VCBO
15
Emitter-Base Voltage
VEBO
4.5
Collector Current, Continuous
IC 30
Operating Junction Temperature
TJ -65 to +200
Storage Temperature
TSTG
-65 to +200
Unit
V
V
V
mA
oC
oC




Semicoa Semiconductor

2N4261 Datasheet Preview

2N4261 Datasheet

PNP Transistor

No Preview Available !

Data Sheet No. 2N4261
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Symbol Min
Collector-Base Breakdown Voltage
IC = 10 µA
V(BR)CBO
15
Collector-Emitter Breakdown Voltage
IC = 10 mA
V(BR)CEO
15
Emitter-Base Breakdown Voltage
V(BR)EBO
4.5
Collector-Emitter Cutoff Current
VCE = 10 V, VEB = 0.4 V
VCE = 10 V, VEB = 2.0 V
VCE = 10 V, VEB = 2.0 V, TA = +150oC
Base Cutoff Current
VCE = 10 V, VEB = 2.0 V
Emitter-Base Cutoff Current
VEB = 4.5 V
ICEX1
ICEX2
ICEX3
IBEX
IEBO
---
---
---
---
---
ON Characteristics
Forward current Transfer Ratio
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V, pulsed
IC = 30 mA, VCE = 1.0 V pulsed
IC = 10 mA, VCE = 1.0 V, TA = -55oC
Collector-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
Base-Emitter Saturation Voltage
VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
Symbol
hFE1
hFE2
hFE3
hFE4
VCE(sat)1
VCE(sat)2
VBE1
VBE2
Min
25
30
20
15
---
---
---
---
Small Signal Characteristics
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
VCE = 4.0 V, IC = 5.0 mA, f = 100 MHz
VCE = 10 V, IC = 10 mA, f = 100 MHz
Open Circuit Output Capacitance
VCB = 4.0 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Symbol
|hfe1|
|hfe2|
COBO
CIBO
Min
15
20
---
---
Switching Characteristics
Collector-Base Time Constant
VCE = 4.0 V, IC = 5.0 mA, f = 31.8 MHz
Collector-Base Time Constant
VCE = 4.0 V, IC = 10 mA, f = 31.8 MHz
Saturated Turn On Switching Time to 90%
VCC = 17 V, 50 ohm pulse generator
Saturated Turn Off Switching Time to 10%
VCC = 17 V, 50 ohm pulse generator
Symbol
r'b'CC1
r'b'CC2
tON
tOFF
Min
---
---
---
---
Max
---
---
---
50
5.0
5.0
5.0
10
Max
---
150
---
---
0.15
0.35
0.8
1.0
Max
---
---
2.5
2.5
Max
60
50
2.5
3.5
Unit
V
V
V
nA
nA
µA
nA
µA
Unit
---
---
---
---
V dc
V dc
V dc
V dc
Unit
---
---
pF
pF
Unit
ps
ps
ns
ns


Part Number 2N4261
Description PNP Transistor
Maker Semicoa Semiconductor
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2N4261 Datasheet PDF






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