• Part: SEMiX202GB17E4s
  • Description: IGBT
  • Manufacturer: Semikron Danfoss
  • Size: 256.62 KB
Download SEMiX202GB17E4s Datasheet PDF
Semikron Danfoss
SEMiX202GB17E4s
Features - Homogeneous Si - Trench = Trenchgate technology - VCE(sat) with positive temperature coefficient - High short circuit capability - UL recognized, file no. E63532 Typical Applications- - AC inverter drives - UPS - Electronic Welding Remarks - Case temperature limited to TC=125°C max. - Product reliability results are valid for Tj=150°C - Dynamic values apply to the following bination of resistors: RGon,main = 1,0/1,9 Ω (Vcc=1200V/900V) RGoff,main = 1,0/1,9 Ω (Vcc=1200V/900V) RG,X = 2,2 Ω RE,X = 0,5 Ω Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3x ICnom VGES tpsc Tj VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2x IFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1...