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Semikron Electronic Components Datasheet

SEMiX205MLI07E4 Datasheet

IGBT

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SEMiX205MLI07E4
SEMiX® 5
3-Level NPC IGBT-Module
SEMiX205MLI07E4
Features
• Solderless assembling solution with
PressFIT signal pins and screw power
terminals
• IGBT 4 Trench Gate Technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Reliable mechanical design with
injection moulded terminals and
reliable internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside
Remarks*
• Case temperature limited to TC=125°C
max
• Product reliability results are valid for
Tjop=150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
• For storage and case temperature with
TIM see document “TP(HALA P8)
SEMiX 5p”
Absolute Maximum Ratings
Symbol Conditions
IGBT1
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
IGBT2
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Diode1
VRRM
IF
IFnom
IFRM
IFSM
Tj
Diode2
VRRM
IF
IFnom
IFRM
IFSM
Tj
Diode5
VRRM
IF
IFnom
IFRM
IFSM
Tj
Module
It(RMS)
Tstg
Visol
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICRM = 3 x ICnom
VCC = 360 V, VGE 15 V, Tj = 150 °C,
VCES 650 V
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICRM = 3 x ICnom
VCC = 360 V, VGE 15 V, Tj = 150 °C,
VCES 650 V
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 2 x IFnom
10 ms, sin 180°, Tj = 25 °C
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 2 x IFnom
10 ms, sin 180°, Tj = 25 °C
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 2 x IFnom
10 ms, sin 180°, Tj = 25 °C
module without TIM
AC sinus 50Hz, t = 1 min
Values
650
262
198
200
600
-20 ... 20
10
-40 ... 175
650
255
193
200
600
-20 ... 20
10
-40 ... 175
650
294
217
200
400
1476
-40 ... 175
650
267
196
200
400
1476
-40 ... 175
650
255
187
200
400
1476
-40 ... 175
300
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
V
µs
°C
V
A
A
A
A
A
°C
V
A
A
A
A
A
°C
V
A
A
A
A
A
°C
A
°C
V
MLI
© by SEMIKRON
Rev. 3.0 – 08.03.2017
1


Semikron Electronic Components Datasheet

SEMiX205MLI07E4 Datasheet

IGBT

No Preview Available !

SEMiX205MLI07E4
SEMiX® 5
3-Level NPC IGBT-Module
SEMiX205MLI07E4
Features
• Solderless assembling solution with
PressFIT signal pins and screw power
terminals
• IGBT 4 Trench Gate Technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Reliable mechanical design with
injection moulded terminals and
reliable internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside
Remarks*
• Case temperature limited to TC=125°C
max
• Product reliability results are valid for
Tjop=150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
• For storage and case temperature with
TIM see document “TP(HALA P8)
SEMiX 5p”
MLI
2
Characteristics
Symbol Conditions
IGBT1
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 8 mA
VGE = 0 V, VCE = 650 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = -15 V...+15 V
Tj = 25 °C
VCC = 300 V
Tj = 150 °C
IC = 200 A
VGE = +15/-15 V
RG on = 1.5 Ω
RG off = 1.5 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 4830 A/µs Tj = 150 °C
di/dtoff = 1800 A/µs
Tj = 150 °C
Rth(j-c)
Rth(c-s)
Rth(c-s)
IGBT2
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 8 mA
VGE = 0 V, VCE = 650 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = -15 V...+15 V
Tj = 25 °C
VCC = 300 V
IC = 200 A
VGE = +15/-15 V
RG on = 1.5 Ω
RG off = 1.5 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 4800 A/µs Tj = 150 °C
di/dtoff = 1800 A/µs
Tj = 150 °C
Rth(j-c)
Rth(c-s)
Rth(c-s)
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
Rev. 3.0 – 08.03.2017
min.
5.1
5.1
typ.
max. Unit
1.55
1.75
0.90
0.82
3.3
4.7
5.8
12.3
0.77
0.37
1956
1.0
79
42
2
283
95
10
0.055
0.04
1.95
V
2.15
V
1.00
V
0.90
V
4.8
mΩ
6.3
mΩ
6.4
V
0.2
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
0.22 K/W
K/W
K/W
1.55
1.75
0.90
0.82
3.3
4.7
5.8
12.3
0.77
0.37
1800
1.0
72
50
1.65
286
95
9.71
0.06
0.045
1.95
V
2.15
V
1.00
V
0.90
V
4.8
mΩ
6.3
mΩ
6.4
V
0.2
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
0.23 K/W
K/W
K/W
© by SEMIKRON


Part Number SEMiX205MLI07E4
Description IGBT
Maker Semikron
PDF Download

SEMiX205MLI07E4 Datasheet PDF






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