SEMiX303GB12E4I50p
Features
-
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature coefficient
- High short circuit capability
- Press-fit pins as auxiliary contacts
- Current sensing shunt resistor
- UL recognized, file no. E63532
Typical Applications
- AC inverter drives
- UPS
- Renewable energy systems
Remarks
- Product reliability results are valid for Tj=150°C
- Visol between temperature sensor and power section is only 2500V
- For storage and case temperature with TIM see document “TP(- ) SEMi X 3p”
GB + shunt © by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES tpsc
Tj
ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2x IFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tc =...
