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Semikron Electronic Components Datasheet

SEMiX303GB12E4I50p Datasheet

IGBT

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SEMiX303GB12E4I50p
SEMiX® 3p shunt
Trench IGBT Modules
SEMiX303GB12E4I50p
Features*
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Current sensing shunt resistor
• UL recognized, file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
Tj=150°C
• Visol between temperature sensor and
power section is only 2500V
• For storage and case temperature with
TIM see document “TP(*) SEMiX 3p”
GB + shunt
© by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3 x ICnom
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 150 °C
Inverse diode
VRRM
IF
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tc = 80°C
Tstg
module without TIM
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
Rth(c-s)
Rth(c-s)
IC = 300 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 11.4 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 300 A
VGE = +15/-15 V
RG on = 1 Ω
RG off = 1 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 6200 A/µs Tj = 150 °C
di/dtoff = 2400 A/µs
dv/dt = 3400 V/µs Tj = 150 °C
Ls = 21 nH
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
Rev. 1.0 – 02.03.2020
Values
1200
469
361
300
900
-20 ... 20
10
-40 ... 175
1200
378
284
300
600
1485
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.80
2.20
0.8
0.7
3.3
5.0
5.8
18.5
1.22
1.04
1695
2.5
165
50
22
440
110
37
0.03
0.021
max. Unit
2.05
V
2.40
V
0.9
V
0.8
V
3.8
mΩ
5.3
mΩ
6.5
V
4.0
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
0.094 K/W
K/W
K/W
1


Semikron Electronic Components Datasheet

SEMiX303GB12E4I50p Datasheet

IGBT

No Preview Available !

SEMiX303GB12E4I50p
SEMiX® 3p shunt
Trench IGBT Modules
SEMiX303GB12E4I50p
Features*
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Current sensing shunt resistor
• UL recognized, file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
Tj=150°C
• Visol between temperature sensor and
power section is only 2500V
• For storage and case temperature with
TIM see document “TP(*) SEMiX 3p”
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 300 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 300 A
Tj = 150 °C
di/dtoff = 6500 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per diode
Rth(c-s)
per diode (λgrease=0.81 W/(m*K))
Rth(c-s)
per diode, pre-applied phase change
material
Module
LCE
RCC'+EE'
Rth(c-s)1
Rth(c-s)2
Rth(c-s)2
Ms
Mt
measured per
switch, shunt
excluded
TC = 25 °C
TC = 125 °C
calculated without thermal coupling
including thermal coupling,
Ts underneath module (λgrease=0.81 W/
(m*K))
including thermal coupling,
Ts underneath module, pre-applied
phase change material
to heat sink (M5)
to terminals (M6)
min.
3
3
typ.
2.20
2.15
1.30
0.90
3.0
4.2
350
50
23
0.046
0.037
20
0.95
1.25
0.009
0.014
0.010
max.
2.52
2.47
1.50
1.10
3.4
4.6
0.15
6
6
w
Temperature Sensor
R100
Tc=100°C (R25=5 kΩ)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
350
493 ± 5%
3550
±2%
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
K/W
K/W
nH
mΩ
mΩ
K/W
K/W
K/W
Nm
Nm
Nm
g
Ω
K
Characteristics
Symbol Conditions
Shunt
RShunt
α
TShunt
Rth(r-c)
PShunt
Tolerance = ±1 %, Tc = 20°C
Tc = 80 °C
min.
typ.
max. Unit
0.50
mΩ
50 ppm/K
170
°C
3
K/W
30
W
GB + shunt
2
Rev. 1.0 – 02.03.2020
© by SEMIKRON


Part Number SEMiX303GB12E4I50p
Description IGBT
Maker Semikron
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SEMiX303GB12E4I50p Datasheet PDF






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