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Semikron Electronic Components Datasheet

SEMiX405MLI07E4 Datasheet

IGBT

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SEMiX405MLI07E4
SEMiX® 5
3-Level NPC IGBT-Module
SEMiX405MLI07E4
Features
• Solderless assembling solution with
PressFIT signal pins and screw power
terminals
• IGBT 4 Trench Gate Technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Reliable mechanical design with
injection moulded terminals and
reliable internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside
Remarks*
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tjop=150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
• For storage and case temperature with
TIM see document “TP(HALA P8)
SEMiX 5p”
Absolute Maximum Ratings
Symbol Conditions
IGBT1
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
IGBT2
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Diode1
VRRM
IF
IFnom
IFRM
IFSM
Tj
Diode2
VRRM
IF
IFnom
IFRM
IFSM
Tj
Diode5
VRRM
IF
IFnom
IFRM
IFSM
Tj
Module
It(RMS)
Tstg
Visol
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICRM = 3 x ICnom
VCC = 360 V, VGE 15 V, Tj = 150 °C,
VCES 650 V
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICRM = 3 x ICnom
VCC = 360 V, VGE 15 V, Tj = 150 °C,
VCES 650 V
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 2 x IFnom
10 ms, sin 180°, Tj = 25 °C
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 2 x IFnom
10 ms, sin 180°, Tj = 25 °C
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 2 x IFnom
10 ms, sin 180°, Tj = 25 °C
module without TIM
AC sinus 50Hz, t = 1 min
Values
650
474
357
400
1200
-20 ... 20
10
-40 ... 175
650
453
340
400
1200
-20 ... 20
10
-40 ... 175
650
377
276
300
600
2160
-40 ... 175
650
345
251
300
600
2160
-40 ... 175
650
327
237
300
600
2160
-40 ... 175
450
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
V
µs
°C
V
A
A
A
A
A
°C
V
A
A
A
A
A
°C
V
A
A
A
A
A
°C
A
°C
V
MLI
© by SEMIKRON
Rev. 2.0 – 06.03.2017
1


Semikron Electronic Components Datasheet

SEMiX405MLI07E4 Datasheet

IGBT

No Preview Available !

SEMiX405MLI07E4
SEMiX® 5
3-Level NPC IGBT-Module
SEMiX405MLI07E4
Features
• Solderless assembling solution with
PressFIT signal pins and screw power
terminals
• IGBT 4 Trench Gate Technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Reliable mechanical design with
injection moulded terminals and
reliable internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside
Remarks*
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tjop=150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
• For storage and case temperature with
TIM see document “TP(HALA P8)
SEMiX 5p”
MLI
2
Characteristics
Symbol Conditions
IGBT1
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 400 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 8 mA
VGE = 0 V, VCE = 650 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = -15V...+15V
Tj = 25 °C
VCC = 300 V
Tj = 150 °C
IC = 400 A
VGE = +15/-15 V
RG on = 2 Ω
RG off = 1.6 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 4750 A/µs Tj = 150 °C
di/dtoff = 3300 A/µs
Tj = 150 °C
Rth(j-c)
Rth(c-s)
Rth(c-s)
IGBT2
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
IC = 400 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 8 mA
VGE = 0 V, VCE = 650 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = -15V...+15V
Tj = 25 °C
VCC = 300 V
IC = 400 A
VGE = +15/-15 V
RG on = 2 Ω
RG off = 1.6 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 4750 A/µs Tj = 150 °C
di/dtoff = 3300 A/µs
Tj = 150 °C
Rth(j-c)
Rth(c-s)
Rth(c-s)
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
Rev. 2.0 – 06.03.2017
min.
5.1
5.1
typ.
1.55
1.75
0.90
0.82
1.63
2.3
5.8
24.7
1.54
0.73
3930
1.0
145
89
5.3
414
100
20.2
0.04
0.03
max. Unit
1.95
V
2.15
V
1.00
V
0.90
V
2.4
mΩ
3.1
mΩ
6.4
V
0.4
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
0.13 K/W
K/W
K/W
1.55
1.75
0.90
0.82
1.63
2.3
5.8
24.7
1.54
0.73
3930
1.0
114.6
88.4
6
412.6
121.6
18.7
0.045
0.026
1.95
V
2.15
V
1.00
V
0.90
V
2.4
mΩ
3.1
mΩ
6.4
V
0.4
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
0.14 K/W
K/W
K/W
© by SEMIKRON


Part Number SEMiX405MLI07E4
Description IGBT
Maker Semikron
PDF Download

SEMiX405MLI07E4 Datasheet PDF






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