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Semikron Electronic Components Datasheet

SEMiX453GB12E4Ip Datasheet

IGBT

No Preview Available !

SEMiX453GB12E4Ip
SEMiX® 3p shunt
Trench IGBT Modules
SEMiX453GB12E4Ip
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Current sensing shunt resistor
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
Tj=150°C
• Visol between temperature sensor and
power section is only 2500V
• For storage and case temperature with
TIM see document “TP(*) SEMiX 3p”
GB + shunt
© by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 150 °C
Inverse diode
VRRM
IF
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFSM
Tj
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS)
Tstg
Visol
module without TIM
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
Rth(c-s)
Rth(c-s)
IC = 450 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 18 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 450 A
VGE = +15/-15 V
RG on = 1.1 Ω
RG off = 1.1 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 6600 A/µs Tj = 150 °C
di/dtoff = 3400 A/µs
du/dt = 4800 V/µs Tj = 150 °C
Ls = 21 nH
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
Rev. 2.0 – 25.01.2017
Values
1200
678
521
450
1350
-20 ... 20
10
-40 ... 175
1200
578
433
450
1350
2430
-40 ... 175
294
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.80
2.19
0.80
0.70
2.2
3.3
5.8
27.9
1.74
1.53
2550
1.7
195
67
33
505
110
57
0.03
0.021
max. Unit
2.05
V
2.40
V
0.90
V
0.80
V
2.6
mΩ
3.6
mΩ
6.5
V
5
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
0.066 K/W
K/W
K/W
1


Semikron Electronic Components Datasheet

SEMiX453GB12E4Ip Datasheet

IGBT

No Preview Available !

SEMiX453GB12E4Ip
SEMiX® 3p shunt
Trench IGBT Modules
SEMiX453GB12E4Ip
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Current sensing shunt resistor
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
Tj=150°C
• Visol between temperature sensor and
power section is only 2500V
• For storage and case temperature with
TIM see document “TP(*) SEMiX 3p”
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 450 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 450 A
Tj = 150 °C
di/dtoff = 6800 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per diode
Rth(c-s)
per diode (λgrease=0.81 W/(m*K))
Rth(c-s)
per diode, pre-applied phase change
material
Module
LCE
RCC'+EE'
Rth(c-s)1
Rth(c-s)2
Rth(c-s)2
Ms
Mt
measured per
switch, shunt
excluded
TC = 25 °C
TC = 125 °C
calculated without thermal coupling
including thermal coupling,
Ts underneath module (λgrease=0.81 W/
(m*K))
including thermal coupling,
Ts underneath module, pre-applied
phase change material
to heat sink (M5)
to terminals (M6)
min.
3
3
typ.
2.14
2.07
1.30
0.90
1.87
2.6
455
85
39
0.045
0.036
20
1.2
1.65
0.009
0.014
0.011
max.
2.46
2.38
1.50
1.10
2.1
2.8
0.1
6
6
w
Temperature Sensor
R100
Tc=100°C (R25=5 kΩ)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
350
493 ± 5%
3550
±2%
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
K/W
K/W
nH
mΩ
mΩ
K/W
K/W
K/W
Nm
Nm
Nm
g
Ω
K
Characteristics
Symbol Conditions
Shunt
IShunt
RShunt
α
Tc = 100 °C, TShunt,max = 170 °C,
Rth = 2.9 K/W
Tolerance = ±1 %
min.
typ.
max. Unit
294
A
0.29
mΩ
50 ppm/K
GB + shunt
2
Rev. 2.0 – 25.01.2017
© by SEMIKRON


Part Number SEMiX453GB12E4Ip
Description IGBT
Maker Semikron
PDF Download

SEMiX453GB12E4Ip Datasheet PDF






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