SK100MLI07S5TD1E2
Features
-
- Optimized design for superior thermal performance
- Low inductive design
- Press-Fit contact technology
- Split IGBT gates for optimized driving
- 650V Trench5 IGBT (S5)
- Rapid switching diode technology
- Integrated NTC temperature sensor
- UL recognized file no. E 63 532
Typical Applications
- UPS
- Energy Storage Systems
- Solar
Remarks-
- Remended Tj,op=-40 ...+150 °C
- IGBTs characteristics are valid for paralleled chips (split gates connected)
- IGBT1: outer IGBTs T1 & T4
- IGBT2: inner IGBTs T2 & T3
- Diode1: outer Diodes D1 & D4
- Diode2: inner Diodes D2 & D3
- Diode5: clamping Diodes D5 & D6
Footnotes
1) Please find further technical information on the SEMIKRON website.
Absolute Maximum Ratings
Symbol Conditions
IGBT1 VCES IC
ICnom ICRM VGES tpsc Tj IGBT2 VCES IC
ICnom ICRM VGES tpsc Tj Diode1 VRRM IF
IFRM IFSM Tj Diode2 VRRM IF
IFRM IFSM Tj
Tj = 25 °C λpaste=0.8 W/(m K) Tj = 175 °C λpaste=2.5 W/(m K) Tj = 175 °C
Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts...
