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SK25GD12T4ETE1 - IGBT

Key Features

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  • Low inductive design.
  • Press-Fit contact technology.
  • Rugged mounting due to integrated mounting clamps.
  • Heat transfer and insulation through direct copper bonded aluminium oxide ceramic (DBC).
  • Trench4 IGBT technology.
  • Robust and soft switching CAL4F diode technology.
  • Integrated NTC temperature sensor.
  • UL recognized file no. E 63 532 Typical.

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Full PDF Text Transcription (Reference)

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SK25GD12T4ETE1 SEMITOP®E1 IGBT module SK25GD12T4ETE1 Features* • Low inductive design • Press-Fit contact technology • Rugged mounting due to integrated mounting clamps • Heat transfer and insulation through direct copper bonded aluminium oxide ceramic (DBC) • Trench4 IGBT technology • Robust and soft switching CAL4F diode technology • Integrated NTC temperature sensor • UL recognized file no. E 63 532 Typical Applications • Motor drives • Servo drives • Air conditioning • Auxiliary Inverters • UPS Absolute Maximum Ratings Symbol Conditions IGBT 1 VCES IC IC ICnom ICRM VGES tpsc Tj Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.