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SK25TMLID12F4TE2 - IGBT

Key Features

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  • Optimized design for superior thermal performance.
  • Low inductive design.
  • Press-Fit contact technology.
  • 1200V Trench IGBT4 Fast (F4).
  • 650V Trench IGBT3 (E3).
  • Robust and soft switching CAL4F diode technology.
  • Integrated NTC temperature sensor.
  • UL recognized file no. E 63 532 Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SK25TMLID12F4TE2 SEMITOP®E2 3-phase 3-Level TNPC Engineering Sample SK25TMLID12F4TE2 Target Data Features* • Optimized design for superior thermal performance • Low inductive design • Press-Fit contact technology • 1200V Trench IGBT4 Fast (F4) • 650V Trench IGBT3 (E3) • Robust and soft switching CAL4F diode technology • Integrated NTC temperature sensor • UL recognized file no. E 63 532 Typical Applications • UPS • Solar Remarks* • Recommended Tjop= -40 ...