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SK75GARL07S5TD1E1 - IGBT

Key Features

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  • Optimized design for superior thermal performances.
  • Low inductive design.
  • Press-Fit contact technology.
  • 650V Trench5 IGBT (S5).
  • Rapid switching diode technology.
  • Integrated NTC temperature sensor.
  • UL recognized file no. E 63 532 Typical.

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Full PDF Text Transcription (Reference)

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SK75GARL07S5TD1E1 SEMITOP®E1 Symmetrical Boost Engineering Sample SK75GARL07S5TD1E1 Target Data Features* • Optimized design for superior thermal performances • Low inductive design • Press-Fit contact technology • 650V Trench5 IGBT (S5) • Rapid switching diode technology • Integrated NTC temperature sensor • UL recognized file no. E 63 532 Typical Applications • UPS • Solar Remarks • Recommended Tjop= -40 ... +150°C • Diode1: outer Freewheeling Diodes • Diode2: inner Antiparalell Diodes Absolute Maximum Ratings Symbol Conditions IGBT 1 VCES IC IC ICnom ICRM VGES tpsc Tj Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.