SK75GD12T4ETE2
SEMITOP®E2
IGBT module
SK75GD12T4ETE2
Features*
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench4 IGBT technology
• Robust and soft switching CAL4F
diode technology
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
Typical Applications
• Motor drives
• Servo drives
• Air conditioning
• Auxiliary Inverters
• UPS
Characteristics
Symbol Conditions
IGBT 1
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 75 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 3 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = -15V ... +15V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 75 A
VGE = +15/-15 V
RG on = 1.1 Ω
RG off = 1.1 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 2410 A/µs Tj = 150 °C
di/dtoff = 593 A/µs
dv/dt = 4035 V/µs Tj = 150 °C
Rth(j-s)
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
Characteristics
Symbol Conditions
Diode 1
VF
VF0
rF
IRRM
Qrr
Err
Rth(j-s)
Rth(j-s)
IF = 75 A
Tj = 25 °C
chiplevel
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 75 A
Tj = 150 °C
di/dtoff = 2410 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per Diode, λpaste=0.8 W/(mK)
per Diode, λpaste=2.5 W/(mK)
min.
5
typ.
1.85
2.25
0.80
0.70
14
21
5.8
4.4
0.29
0.235
553
10
129
42
6.62
333
65
7.11
0.61
0.39
max. Unit
2.10
V
2.45
V
0.90
V
0.80
V
16
mΩ
22
mΩ
6.5
V
1
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
K/W
min.
typ.
2.17
2.11
1.30
0.90
12
16
114
11.22
4.41
0.82
0.55
max. Unit
2.49
V
2.42
V
1.50
V
1.10
V
13
mΩ
18
mΩ
A
µC
mJ
K/W
K/W
GD-ET
2
Rev. 1.0 – 08.01.2020
© by SEMIKRON
