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Semikron Electronic Components Datasheet

SK80TMLI12F4Tp Datasheet

IGBT

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SK80TMLI12F4Tp
SEMITOP® 3 Press-Fit
3-Level TNPC
SK80TMLI12F4Tp
Features*
• One screw mounting module
• Low inductive design
• Press-Fit contact technology
• Fully compatible with other SEMITOP®
Press-Fit types
• 1200V Trench IGBT4 Fast (F4)
• 650V Trench IGBT3 (E3)
• Robust and soft switching CAL 4F
diode technology
• Integrated NTC temperature sensor
• UL recognized, file no. E 63 532
Typical Applications
• UPS
• Solar
Remarks*
• Recommended Tjop= -40 ... +150°C
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer Diodes D1 & D4
• Diode2: inner Diodes D2 & D3
Absolute Maximum Ratings
Symbol Conditions
IGBT1
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
IGBT2
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Diode1
VRRM
IF
IFRM
IFSM
Tj
Diode2
VRRM
IF
IFRM
IFSM
Tj
Module
It(RMS)
Tstg
Visol
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
VCC = 800 V, VGE 15 V, Tj = 150 °C,
VCES 1200 V
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
VCC = 360 V, VGE 15 V, Tj = 150 °C,
VCES 650 V
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
10 ms, sin 180°, Tj = 25 °C
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
10 ms, sin 180°, Tj = 25 °C
Tterminal at PCB joint = 30 K, per pin
module without TIM
AC, sinusoidal, t = 1 min
Values
1200
88
72
80
240
-20 ... 20
10
-40 ... 175
650
79
63
75
225
-20 ... 20
6
-40 ... 175
1200
81
64
150
430
-40 ... 175
650
108
84
200
820
-40 ... 175
35
-40 ... 125
2500
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
V
µs
°C
V
A
A
A
A
°C
V
A
A
A
A
°C
A
°C
V
TMLI-T
© by SEMIKRON
Rev. 1.0 – 28.01.2021
1


Semikron Electronic Components Datasheet

SK80TMLI12F4Tp Datasheet

IGBT

No Preview Available !

SK80TMLI12F4Tp
SEMITOP® 3 Press-Fit
3-Level TNPC
SK80TMLI12F4Tp
Features*
• One screw mounting module
• Low inductive design
• Press-Fit contact technology
• Fully compatible with other SEMITOP®
Press-Fit types
• 1200V Trench IGBT4 Fast (F4)
• 650V Trench IGBT3 (E3)
• Robust and soft switching CAL 4F
diode technology
• Integrated NTC temperature sensor
• UL recognized, file no. E 63 532
Typical Applications
• UPS
• Solar
Remarks*
• Recommended Tjop= -40 ... +150°C
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer Diodes D1 & D4
• Diode2: inner Diodes D2 & D3
Characteristics
Symbol Conditions
IGBT1
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 80 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 3 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 15 V...+ 15 V
Tj = 25 °C
VCE = 300 V
Tj = 150 °C
IC = 80 A
VGE = +15/-15 V
RG on = 0.5 Ω
RG off = 0.5 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 3100 A/µs Tj = 150 °C
di/dtoff = 783 A/µs
dv/dt = 3200 V/µs Tj = 150 °C
Rth(j-s)
IGBT2
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
per IGBT
IC = 75 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 1.2 mA
VGE = 0 V, VCE = 650 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 15 V...+ 15 V
Tj = 25 °C
VCE = 300 V
Tj = 150 °C
IC = 80 A
VGE = +15/-15 V
RG on = 0.5 Ω
RG off = 0.5 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 5300 A/µs Tj = 150 °C
di/dtoff = 1000 A/µs
dv/dt = 4200 V/µs Tj = 150 °C
Rth(j-s)
per IGBT
min.
5.2
5
typ.
2.05
2.59
0.80
0.70
16
24
5.8
4.6
0.37
0.27
667
0
22
23
1.75
183
59
3
0.54
1.45
1.83
0.75
0.68
9.3
15
5.8
4.62
0.288
0.137
718
0
14
15
0.56
132
60
2.46
0.82
max. Unit
2.40
V
2.85
V
0.90
V
0.80
V
19
mΩ
26
mΩ
6.4
V
1
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
1.77
V
2.15
V
0.90
V
0.83
V
12
mΩ
18
mΩ
6.5
V
0.2
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
TMLI-T
2
Rev. 1.0 – 28.01.2021
© by SEMIKRON


Part Number SK80TMLI12F4Tp
Description IGBT
Maker Semikron
PDF Download

SK80TMLI12F4Tp Datasheet PDF






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