SKIIP81ANB15T1
SKii P 81 ANB 15 T1 Absolute Maximum Ratings
Symbol Conditions 1)
Bridge Rectifier VRRM ID IFSM I²t Theatsink = 80 °C tp = 10 ms; sin. 180°, Tj = 25 °C tp = 10 ms; sin. 180°, Tj = 25 °C 1500 100 3) 1000 5000 1200 ± 20 33 / 22 66 / 44 1200 24 / 17 48 / 34
- 40 ... + 150
- 40 ... + 125 2500 V A A A²s V V A A V A A °C °C V
Values
Units
Mini SKii P 8 SEMIKRON integrated intelligent Power SKii P 81 ANB 15 T1 3-phase bridge rectifier + IGBT braking chopper
IGBT Chopper VCES VGES IC Theatsink = 25 / 80 °C I CM .. tp < 1 ms; Theatsink = 25 / 80 °C Freewheeling Diode 2) VRRM IF IFM Tj Tstg Visol Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Diode & IGBT AC, 1 min.
Case M8a
Characteristics
Symbol Conditions 1)
Diode
- Rectifier VF VTO r T Rthjh IF = 75 A Tj = 125 °C Tj = 125 °C Tj = 125 °C per diode
- -
- -
- -
- -
- -
- -
- -
- -
- -
- 1,15 0,8 4,5
- 2,5(3,1) 75 65 400 50 6,2 1,65
- 2,0(1,8) 1,0 53 16 2,7 0,6
- -
- - 1,0 3,0(3,7)
- -
- -
- - 1,0 2,5(2,3) 1,2 73
- -
- 1,7 V V mΩ K/W min. typ. max.
Units
IGBT
- Chopper IC = 25 A Tj = 25 (125) °C VCEsat td(on) VCC = 600 V; VGE = ± 15 V tr IC = 25 A; Tj = 125 °C Rgon = Rgoff = 47 Ω td(off) tf inductive load...