Datasheet4U Logo Datasheet4U.com

SKM100GAL123D - IGBT

Key Features

  • MOS input (voltage controlled).
  • N channel, Homogeneous Si.
  • Low inductance case.
  • Very low tail current with low temperature dependence.
  • High short circuit capability, self limiting to 6.
  • Icnom.
  • Latch-up free.
  • Fast & soft inverse CAL diodes8).
  • Isolated copper baseplate using DCB Direct Copper Bon- ding Technology.
  • Large clearance (10 mm) and creepage distances (20 mm). Typical.

📥 Download Datasheet

Datasheet Details

Part number SKM100GAL123D
Manufacturer Semikron
File Size 942.38 KB
Description IGBT
Datasheet download datasheet SKM100GAL123D Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SKM100GAL12T4 IGBT Semikron International
SKM100GAL163D IGBT Semikron International
SKM100GAxxxD SEMITRANS IGBT Semikron International
SKM100GB063D IGBT Semikron International
SKM100GB123D IGBT Semikron International

Other Datasheets by Semikron

Part Number Description
SKM100GAL12F4 IGBT
SKM100GAL17E4 IGBT
SKM100GAR123D IGBT
SKM100GAR12F4 IGBT
SKM100GAR17E4 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C IFM= – ICM Tcase = 25/80 °C; tp = 1 ms IFSM tp = 10 ms; sin.; Tj = 150 °C I2t tp = 10 ms; Tj = 150 °C Values 1200 1200 100 / 90 200 / 180 ± 20 690 – 40 . . .