SKM100GAL123D igbt equivalent, igbt.
* MOS input (voltage controlled)
* N channel, Homogeneous Si
* Low inductance case
* Very low tail current with low
temperature dependence
* High shor.
→ B 6 -115
* Switching (not for linear use)
1) Tcase = 25 °C, unless otherwise specified
2) IF =
–.
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